T-gate ALGaN/GaN HEMT with effective recess engineering for enhancement mode operation

Abstract

This paper reports, AlGaN/GaN HEMT device with Enhancement mode (Positive threshold voltage) operation achieved by Piezo neutralization layer (PNT) and T-Gate structure, along with gate recess engineering technique. The Proposed T-Gate structure HEMT device is analyzed with two different gate recess depths. Better results is obtained with 0.015 µm gate recess, showing double the time transconductance gm of 370 mS/mm compared with conventional AlGaN/GaN HEMT, Moreover positive Threshold Voltage +0.3 V is achieved without compromising ON-resistance RON = 0.00269 Ω. The TCAD simulation results evidence that proposed HEMT structure efficient in terms enhancement mode operation and device parameters than conventional HEMT.