Abstract
This chapter introduces the design of three-dimensional (3D) NAND flash memory with the implications from the system side. For conventional two-dimensional (2D) scaling, it is facing various limitations such as lithography cost and cell-to-cell coupling interference. To sustain the trend of bit-cost reduction beyond 10 nm technology node, 3D NAND flash memory is considered as the next generation technique. Further, emerging memories called storage-class memories (SCMs) such as resistive RAM (ReRAM), phase change RAM (PRAM) and magnetoresistive RAM (MRAM) will revolutionize the storage system design. By introducing SCM into the solid-state drive (SSD), hybrid SCM/3D-NAND flash SSD and all SCM SSD achieve much higher write performance than all 3D-NAND flash SSD due to SCM’s fast speed. In addition, the performance of the SSD is workload dependent. Thus, it is meaningful to obtain the design guidelines of 3D NAND flash for both all 3D-NAND flash SSD and hybrid SCM/3D-NAND flash SSD with representative real-world workloads.
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