Abstract
We have investigated the temperature dependence of the in-plane resistivity and the Hall coefficient for high-quality single crystal Bi 2Sr 2CaCu 2O 8+ δ (Bi2212) in a wide doping range. Doping is controlled by successive annealing treatments from a nearly optimally doped region to an insulating region systematically. It is found that the residual resistivity increases notably with decreasing doping and undergoes the superconductor–insulator (SI) transition when the residual resistivity becomes ∼1 mΩ cm, which corresponds to the universal sheet resistance h/4 e 2. In addition, the Hall coefficient at which superconductivity disappears is found to be very small compared with the La- or Y-based system. These results imply that the transition temperature is anomalously suppressed in the underdoped region of Bi2212 while the SI transition is of the same origin for various systems.
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