Systematic Study Related to the Role of Initial Impurities and Irradiation Rates in the Formation and Evolution of Complex Defects in Silicon for Detectors in HEP Experiments*

Abstract

The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative phenomenological model developed previously by the authors and extended in the present paper. Continuous irradiation conditions are considered, simulating realistically the environments for these experiments. The generation rate of primary defects is calculated starting from the projectile–silicon interaction and from the recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy- and interstitial-impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: V2, VO, V2O, Ci, CiOi, CiCs and VP, is studied. The model predictions cover a generation rate of primary defects between 102 pairs/cm3/s and 1011 pairs/cm3/s, and could be a useful clue in obtaining harder materials for detectors for space missions, at the new generation of accelerators, as, e.g. LHC, Super-LHC and Eloisatron, or for industrial applications.