Systematic study on Si and Se doping of MOVPE GaAs

Abstract

Si and Se doping mechanisms of MOVPE GaAs have been studied systematically over a wide range of [AsH3]/[TMG]. In the region where undoped GaAs in n-type, the Se incorporation depends on [H2Se]/[AsH3] and the thermal decomposition of AsH3, but it is independent of [TMG]; the incorporation depends on [Si2H6]/[TMG] (or[SiH4]/[TmG]) and the thermal decomposition of [Si2H6] (or [SiH4]), but it is independent of [AsH3]. In the region where undoped GaAs is p-type, the incorporation of Si or Se depends on both [TMG] and [AsH3].