Abstract
Charge collection efficiency dependence on reverse bias voltage ( V B) and on a neutron fluence (φ) was studied for both Float-Zone (FZ) and Magnetic-Czochralski (MCZ) silicon detectors, irradiated with fast neutron fluences, larger than 10 13 n/cm 2. For both types of irradiated detectors, the charge collection efficiency was found to have a logarithime dependence on φ and its dependence on V B indicated that the relation between charge-carrier concentration and full depletion voltage is not according to the standard equation of a p + n n + device.
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