Abstract
Float-Zone (FZ) silicon detectors have been irradiated with large fast neutrons fluences (up to 10 14 n/cm 2). The charge collection efficiency (eff) dependence on the reverse bias voltage ( V) and on the fluence (Φ) have been investigated. The charge collection dependence on V indicates that, after large neutron irradiation, the relation between charge carrier concentration and full depletion voltage does not obey any longer the standard equation for an unsymmetrical step junction. The charge collection efficiency is found to have a logarithmic dependence on Φ.
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