Abstract
Float-Zone (FZ) silicon detectors have been irradiated with large fast neutrons fluences (up to 10 14 n/cm 2). The charge collection efficiency (eff) dependence on the reverse bias voltage ( V) and on the fluence (Φ) have been investigated. The charge collection dependence on V indicates that, after large neutron irradiation, the relation between charge carrier concentration and full depletion voltage does not obey any longer the standard equation for an unsymmetrical step junction. The charge collection efficiency is found to have a logarithmic dependence on Φ.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
