Abstract
Boron doped diamond (BDD) films were deposited on porous Ti substrates by direct current plasma chemical vapor deposition (DC-PCVD) system. For improve adhesion between diamond and porous Ti, and shorten diamond nucleation period, appropriate pretreatments were carried out. Micro diamond particles were mechanical embedded in the holes of porous Ti substrates and then nanodiamond powders were seeded on substrates by ultrasound sonication prior to deposition. The samples were examined by scanning electron microscopy (SEM), micro-Raman spectroscopy, and cyclic voltammetry. It was found that BDD films covered the whole porous Ti substrate surface, and exhibited the good electrochemical property.
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