Synthesis, Structural and Optical Investigation of Cdse Semiconductor Quantum Dots

Abstract

In this paper, we present a simple synthetic route for the development of high quality CdSe quantum dots TGA capped in aqueous solutions. CdSe semiconducting Quantum dots were prepared by a chemical method at room temperature. The crystal structure, morphology, spectral and compositional properties were analyzed from X-ray Diffraction, High resolution transmission electron microscopy (HRTEM), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), UV-VIS absorbance and Photoluminescence (PL), Fourier transform infrared (FTIR) and Fourier transform RAMAN (FT-RAMAN) techniques. The XRD results depicted the formation of CdSe quantum dots with an average crystallite size of 3 nm and 4 nm, which is in accordance with observations from HRTEM and TEM micrographs with an average particle diameter range between 2-3 nm. The UV-VIS absorbance peaks indicate a broad absorption behavior of CdSe quantum dots. The calculated band gap energy is found to be 2.55 eV and further it is found the particle size estimated from the maximum excitonic peaks for CdSe 2.7 nm. The photoluminescence studies evidenced that the luminesce property of quantum dots can be varied by systematically tuning precursor concentrations and the PL confirms the strong excitation peaks for the synthesized CdSe QDs with peak centered at 603 nm. The capping of TGA was confirmed from FTIR and FT-RAMAN studies. From the FTIR spectra it is observed that, for the synthesized CdSe QDs almost all the peaks are common with slightly shifting behavior towards larger and shorter wave numbers. FT-Raman analysis was performed to study the sample qualities such as micro crystallinity, homogeneity and surface conditions for the as synthesized CdSe quantum dot. The resulting colloids are very stable, and no precipitate is observed over a period of 6 months.