Abstract

We designed and synthesized unsubstituted 4,4′-bibenzo[c]thiophene 4,4′-BBT and its silyl-substituted derivatives 1,1′-Si-4,4′-BBT and 1,1′,3,3′-Si-4,4′-BBT with one or two tert-butyldimethylsilyl groups on each thiophene ring, as new π-building blocks in emitters, photosensitizers and semiconductors for organic optoelectronic devices. The characterization of 4,4′-BBT, 1,1′-Si-4,4′-BBT and 1,1′,3,3′-Si-4,4′-BBT was successfully determined by FTIR, 1H and 13C NMR measurements, high-resolution mass spectrometry (HRMS) analysis, photoabsorption and fluorescence spectroscopy, cyclic voltammetry (CV) and density functional theory (DFT) calculations. Moreover, a single-crystal X-ray structural analysis was successfully made for 1,1′-Si-4,4′-BBT and 1,1′,3,3′-Si-4,4′-BBT. The photoabsorption and fluorescence maxima (λabsmax and λflmax) of the three 4,4′-bibenzo[c]thiophene derivatives in toluene exhibit bathochromic shifts in the order of 4,4′-BBT (359 nm and 410 nm) < 1,1′-Si-4,4′-BBT (366 nm and 420 nm) < 1,1′,3,3′-Si-4,4′-BBT (371 nm and 451 nm). The HOMO and LUMO energy levels rise in the order of 4,4′-BBT (−5.55 eV and −2.39 eV) < 1,1′-Si-4,4′-BBT (−5.45 eV and −2.34 eV) < 1,1′,3,3′-Si-4,4′-BBT (−5.34 eV and −2.30 eV), but the rise of the HOMO energy level is larger than that of the LUMO energy level, resulting in the bathochromic shift of the photoabsorption band from 4,4′-BBT to 1,1′,3,3′-Si-4,4′-BBT. The fluorescence quantum yields (Φfl) of 4,4′-BBT, 1,1′-Si-4,4′-BBT and 1,1′,3,3′-Si-4,4′-BBT in toluene are 0.41, 0.41 and 0.36, respectively. It is worth mentioning that in the solid state 1,1′-Si-4,4′-BBT and 1,1′,3,3′-Si-4,4′-BBT show relatively high Φfl-solid values of 0.22 and 0.25, respectively, whereas 4,4′-BBT exhibits poor solid-state fluorescence properties (Φfl-solid < 0.02). This work provides an efficient synthetic method for the 4,4′-bibenzo[c]thiophene derivatives and their photophysical properties in the solution and solid state, electrochemical properties and X-ray crystal structures.

Highlights

  • The characterization of BBT-1, BBT-2 and BBT-3 was successfully determined by FTIR, 1H and 13C NMR measurements, highresolution mass spectrometry (HRMS) analysis, photoabsorption and uorescence spectroscopy, cyclic voltammetry (CV) and density functional theory (DFT) calculations

  • We demonstrated that BBT-2 with a tert-butyldimethylsilyl group on each thiophene ring was obtained by the reaction of 1 with tetramethylethylenediamine (TMEDA) and nBuLi, followed by treatment with tert-butyldimethylsilyl chloride (TBDMSCl)

  • We have achieved a facile synthesis of 4,40-bibenzo[c]thiophene derivatives, unsubstituted 4,40-bibenzo[c]thiophene 4,40-BBT and its silyl-substituted derivatives 1,10-Si-4,40-BBT and 1,10,3,30Si-4,40-BBT with one or two tert-butyldimethylsilyl groups on each thiophene ring, and revealed their photophysical properties in the solution and in the solid state and electrochemical properties

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Summary

Introduction

Benzo[b]thiophene as a p-building block has created considerable scienti c interest in synthetic organic chemistry, photochemistry, electrochemistry and theoretical chemistry as well as materials chemistry, because it is an especially crucial player for functional materials due to the air-stability and commercial availability (Fig. 1). benzo[b]thiophene derivatives are key constituents of emitters, semiconductors and photosensitizers for organic optoelectronic devices, such as organic lightemitting diodes (OLEDs), organic eld-effect transistors (OFETs), organic photovoltaics (OPVs) and dye-sensitized solar cells (DSSCs). much effort has been made towards the construction and characterization of fused benzo[b]thiophene systems such as thienoacenes (e.g., [1]benzothieno[3,2-b] [1]benzothiophene (BTBT), dinaphtho[2,3-b:20,30-f]thieno[3,2-b] thiophene (DNTT) and dianthra[2,3-b:20,30-f]thieno[3,2-b]thiophene (DATT))6a and thiophene-fused naphtho[2,3-b:6,7-b] dithiophene diimide (NDTI)6b in the past two decades. Much effort has been made towards the construction and characterization of fused benzo[b]thiophene systems such as thienoacenes (e.g., [1]benzothieno[3,2-b] [1]benzothiophene (BTBT), dinaphtho[2,3-b:20,30-f]thieno[3,2-b] thiophene (DNTT) and dianthra[2,3-b:20,30-f]thieno[3,2-b]thiophene (DATT))6a and thiophene-fused naphtho[2,3-b:6,7-b] dithiophene diimide (NDTI)6b in the past two decades. These benzo[b]thiophene derivatives have been used as organic semiconductors with high carrier mobility and stability under ambient conditions. The benzo[c]thiophene unit contains a thiophene ring in the structure. PITN has a low band gap (Eg 1⁄4 1.0–1.2 eV), which is about 1.0 eV lower than that of polythiophene (PT), because the polymer backbone of PITN intrinsically stabilizes its quinoidal state, 18870 | RSC Adv., 2021, 11, 18870–18880

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