Abstract
Zirconium silicide was synthesized on Si (100)/zirconium interface by means of swiftly moving 150 MeV Au ion beam. Thin films of zirconium (~60 nm) were deposited on Si (100) substrates in ultra high vacuum conditions using the electron-beam evaporation technique. The system was exposed to different ion fluencies ranging from 3 × 1013 to 1 × 1014 ions/cm2 at room temperature. Synthesized zirconium silicide thin film reasonably affects the resistivity of the irradiated system and for highest fluence of 1 × 1014 ions/cm2 resistivity value reduces from 84.3 to 36 μΩ cm. A low resistivity silicide phase, C-49 ZrSi2 was confirmed by X-ray analysis. Schottky barrier height was calculated from I–V measurements and the values drops down to 0.58 eV after irradiation at 1 × 1014 ions/cm2. The surface and interface morphologies of zirconium silicide were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM shows a considerable change in the surface structure and SEM shows the ZrSi2 agglomeration and formation of Si-rich silicide islands.
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