Abstract
Nanocrystals of wide band gap materials (GaN and In 2O 3) were synthesized by sequential ion implantation in dielectric substrates, followed by thermal annealing of the samples. Transmission electron microscopy, extended X-ray absorption fine structure spectroscopy and grazing incidence X-ray diffraction analyses confirmed the formation of GaN and In 2O 3 crystalline nanoparticles. Blue shift of the near-edge photoluminescence (PL) band (quantum confinement effect) was observed for GaN nanocrystals. A strong PL band peaked at 3.35 eV was detected upon excitation of In 2O 3 nanocrystals at 5.20 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
