Abstract

ABSTRACTTin oxide (SnO2) thin films have been grown on Si (100) and Al2O3 substrates by pulsed Nd:YAG (532nm) and KrF excimer (248 nm) laser deposition methods using SnO2 targets. X-ray diffraction measurement showed that the almost amorphous microstructure transformed into a crystalline SnO2 phase and preferred orientation varied from (101) to (110) on Si (100) with increasing oxygen gas pressure. This result suggests that oxygen gas pressure affects the phase formation, crystalline structure and preferred orientation of the films. Gas sensing properties of SnO2 thin films by PLD method were also investigated over the temperature range 300 – 600°C, using 0.31vol%H2 as a test gas. The oxygen gas pressure results in a notable change in gas sensing properties of SnO2 thin films.

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