Abstract
In this paper, we present the impact of swift heavy ion beam irradiation on the structural, optical and electronic properties of SnO2 thin films. Thin films were deposited using the pulsed laser deposition technique on Al2O3 substrates. Atomic force microscopy, X-ray diffraction, UV–visible absorption and temperature-dependent resistivity measurements were performed to explore the morphological, structural, optical and electronic properties of the as-deposited and irradiated samples. The peak intensity of the (200) peak was found to decrease monotonously with increasing irradiation fluence. The band gap energy of the 1×1011 ion/cm2 irradiated sample was found to increase. The electrical resistivity of the samples showed a continuous increase with the irradiation fluence.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
