Abstract
A series of hole-transporting molecules based on spiro(fluorene-9,9′-xanthene) were designed and synthesized by a copper-catalyzed modified Ullmann reaction. These compounds have very high-lying HOMO levels (∼5.0eV), which are beneficial for the hole-injection from ITO anode. The double-layer EL devices using DPA-SFXMe and DPA-SFXBu as hole-transporting layers exhibit lower turn-on voltage and higher efficiency compared with those of a typical NPB-based device. The DPA-SFXBu-based device exhibits high maximum luminescence of 21,712cd/m2, and its power efficiency can reach a value of 2.31lm/W, which is nearly 90% higher than that of a similar NPB-based device.
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