Abstract
We synthesized semiconducting Sn-doped hydrogenated amorphous carbon films by RF plasma-enhanced chemical vapor deposition (PECVD) using an organotin compound as a doping gas source. XPS quantitative analysis for the deposited films after 10 s argon ion etching revealed that Sn composition increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C–Sn bond which had a negative chemical shift. The C 1s spectra also indicated that the deposited films were relatively sp 2 rich. The chemical shift of the Sn–C bond in Sn 3d 5/2 spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.
Published Version
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