Abstract
Bismuth Telluride is the most efficient thermoelectric material near room temperature with the highest figure of merit. It is known that figure of merit can be improved in nanostructures. This paper reports the synthesis of highly uniform and single crystalline BiTe nanobelts by a simple catalyst free vapor transport method. The morphology, structure, phase purity and stoichiometry of the nanobelts were investigated by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and x-ray energy-dispersive spectrometry. The results revealed the growth of hexagonal BiTe nanobelts along (110) planes. A probable growth mechanism is discussed. This simple approach will provide growth of BiTe nanobelts and related chalcogenides, which could be used as a potential material for future solid state thermoelectric devices.
Published Version
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