Abstract
Enhanced electroluminescence (EL) of ITO∕SiOx∕Si-nanopyramid/p-Si∕Al diode is investigated. By using low-power plasma enhanced chemical vapor deposition at high substrate temperature, anomalous (100)-oriented Si nanopyramids with a surface density of 1.6×1010cm−2 are synthesized at SiOx∕Si interface prior to grow Si-rich SiOx film. Si nanopyramids greatly improve Fowler-Nordheim tunneling based carrier transport and benefit from less damaged oxide structure at lower biases. The turn-on voltage and threshold current density of the diode are reduced to 50V and 0.2mA∕cm2, respectively. Defect-related blue-green EL are suppressed to enhance stable near-infrared EL at 30nW with a lifetime >10h.
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