Abstract
A strong requirement in manufacturing of high-efficiency solar cells is its cost reduction. One approach of aim is to merge several steps of n+ Si selective emitter processing into one step without degrading the performance of solar cells. By varying the doping level in the selective area, intrinsic fields can be built into solar cells with potential benefits long recognized. In this paper, the spin-on doping (SOD) method was used for the purpose of important tasks, different phosphorus diffusion to form n+ Si selective area consisting of the lightly and heavily doping emitter areas with 35 Ω/sheet and 121 Ω/sheet. The main solution containing different concentrations of phosphorus doped-SOD source was synthesized in this work. The sheet-resistance dependence of n-Si emitter layers on the concentration of phosphorus acid in the SOD solution was studied in term of the volume ration of TEOS: H3PO4, as well as the thermal diffusion temperature. The suitable condition for forming n+ Si selective emitters in one process step is 1000°C diffusion temperature for 30 minutes with the complementary SOD volume ratio of 4:1 and 2:1. SOD solution can be patterned by a screen printing or an inkjet printing.
Highlights
In last 40 years several types of crystalline silicon (c-Si) solar cells were increasingly developed for high efficiency laboratory cells where the processing relies on all available high-quality materials and techniques to reduce losses
About 100 nm the thickness of the silicon oxide layer is chosen for designing antireflection coating (ARC) layer for Si solar cells in order to minimize reflectance for a wavelength of 600 nm
It seems that PSG film from a starting material of spin-on doping (SOD) solution in the ratio of 4: 1 TEOS: H3PO4 could be used for ARC to have an agreement with Yujie Tang’s work [9] that involved dual tasks for preparing n+ emitter and ARC layers
Summary
In last 40 years several types of crystalline silicon (c-Si) solar cells were increasingly developed for high efficiency laboratory cells where the processing relies on all available high-quality materials and techniques to reduce losses. The most commercial selective emitter silicon (SE Si) solar cell involves lightly doping nemitter layer on front p-Si surface substrate followed by the standard antireflection process and heavy doping n+ emitter region underneath silver contacts completed by screen printing after firing [3]. This common method to achieve n+ type Si region is compatible with mass product technique to form front contact using silver paste with quickly firing. Many SE techniques have involved the additional diffusion process steps which effect on low fabrication cost [7]
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