Synthesis of palladium diethyldithiocarbamate complexes as precursor for the deposition of un-doped and copper sulfide doped thin films by a facile physical vapour deposition technique

Abstract

Palladium sulfide thin films have been effectively prepared through a physical vapour deposition technique. Metal diethyldithiocarbamate complexes have been synthesized and used as precursors for the deposition of un-doped and copper sulfide doped palladium sulfide thin films. XRD analysis confirmed that the complex deposited pure cubic palladium sulfide films. The incorporation of copper in palladium sulfide changed the lattice parameters of palladium sulfide in thin films. The purity of thin films and copper doping was confirmed by the commencing of new peaks. FTIR analysis also validates the presence of respective metal complexes. UV–vis studies revealed the peak shift from 431−393 nm showing the variance in transmittance and reflectance from 80−69% and 20–35 % with the band gap 1.57 eV–1.64 eV. Study of surface morphology of the films by SEM showed the cauliflower-like structure of metal sulfide particles. The elemental composition of the films by EDX spectroscopy confirmed the presence of respective metal sulfide on the thin film. To the best of our knowledge, these complexes are the first in their class to be used as single source precursors to deposit CuxPd1-xS2 thin films.