Synthesis and physiognomic study of copper sulfide doped cobalt sulfide

Abstract

Cobalt sulfide thin films have been efficaciously fabricated by physical vapour deposition technique (PVD). Diethyldithiocarbamato metal complexes of the overall formula [M(S2CN(Et)2)n] (M=Co,Cu) have been manufactured and used as precursors for the deposition of pure and copper sulfide doped cobalt sulfide thin films on glass substrate. X-ray diffraction and Fourier transform infrared analysis of thin films confirmed the cubic and spherical sheet like structures. UV–vis studies revealed that absorption peak shifted from higher to lower wavelength with the reduction in transmittance and reflectance. While the scanning electron micrographs confirmed the cubic metal sulfide particles with the band gap calculated as 2.4–2.0 eV in metal sulfide thin films. These complexes are the first in their class to be used as single source precursors to deposit CuxCo1−xS2 thin films.