Synthesis of nitrogen-doped graphene via pentachloropyridine as the sole solid source

Abstract

The substitution of nitrogen atoms in the lattice plane of the graphene can adjust the electronic properties of the graphene to translate it from the half-metal to the n-type semiconductor. Here, we report a practicable growth of nitrogen-doped graphene films with the nitrogen atoms doped content of 4.4–7.5% by the sole solid precursor based chemical vapor deposition method. After the post-annealing process at high temperature, the morphology and crystallization quality of the nitrogen-doped graphene film were considerably improved. The as-synthesized nitrogen-doped graphene films exhibit typical n-type behavior with the electron carrier density of approximately 6.55 × 1012 cm−2 and the Hall mobility of around 522 cm2V−1 s−1.