Preparation of Nitrogen-Doped Graphene Films for Temperature Sensing by Crosslinking with Two-Dimensional Small Molecule

Abstract

Graphene, as a typical zero band gap material, possesses excellent electrical conductivity and mechanical property, but is hardly applied in functional field directly. Hence, how to effectively modify the energy structure of graphene and apply it as functional material in physical signal sensing, information processing and energy management has become a widely attentional research field in recent decades. In this work, a two-dimensional (2D) organic molecular named 5, 10, 15, 20-tetra (4-aminopyenyl) porphyrin is selected to in-situ crosslink with graphene oxide (GO), and the nitrogen-doped graphene (NG) film is prepared through further graphitization. In this paper, the influence of the content of porphyrin molecular on the microstructure and nitrogen content of the NG film is mainly discussed. With the increasing of porphyrin content, the layer space of GO film rises gradually and the GO nanosheets are laid out more smoothly. After graphitization, nitrogen element is well preserved inside the NG film, and the electrical conductivity and Seebeck coefficient is greatly improved. Taking advantage of these properties, a NG film-based temperature sensor is prepared.