Abstract
Nanostructured indium tin oxide (ITO) films were deposited on silica glass by sol–gel dipping method from salt derived PVA based aqueous precursor. The films were cured at 250 °C, 350 °C, 450 °C, 600 °C, 700 °C and 900 °C and characterized by XRD, SEM, AFM techniques to observe heating effect on nanostructured feature. Nanocluster sizes were determined by TEM study. Different crystal phases of ITO were existed in the temperature range 250–900 °C. Quantum confinement behavior of the nanoclusters was observed for their size being near Bohr radius. Absorption, band gap and photoluminescence behavior of the nanstructured ITO films supported excitonic transitions due to the formation of electron hole pair generated by interaction of electromagnetic radiation.
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