Abstract
The growth of microcrystalline (µc-) Si:H:Cl films was studied using a high-density and low-temperature microwave plasma source and a spoke antenna of a SiH2Cl2–H2 mixture. Spectroscopic ellipsometry and cross-sectional transmission electron microscopy revealed that the µc-Si:H:Cl films with a small volume fraction of void were synthesized from SiH2Cl2 rather than µc-Si:H from SiH4 at a high deposition rate of 20 Å/s. These originated from the chemical reactivity of SiHxCly in high-density microwave plasma. The excessive crystallization was suppressed with a small volume fraction of void in SiH2Cl2 plasma compared with that synthesized from SiH4. The fine structure of µc-Si:H:Cl was studied and compared with that of previously studied µc-Si:H synthesized from SiH4 [Jpn. J. Appl. Phys. 38 (1999) 6629].
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