Abstract
The surface morphology of silicon substrates and their optical properties have been investigated after ion implantation by three Mg+ fluencies (Φ = 6×1015cm-2, 1×1016cm-2 and 6×1016cm-2) and pulsed ion-beam treatment (PIBT) with three energy densities (W = 0.5, 1.0 and 1.5J/cm2). Magnesium ion implantation into Si(111) substrates at room temperature results in the formation of smooth amorphous silicon layer with thickness of about 0.15 Φm containing amorphous non-stoichiometric magnesium silicide. Subsequent nanosecond PIBT leads to crystallization silicon and synthesis Mg2Si precipitates. The optimum conditions of ion implantation and PIBT leading to silicon crystallization and Mg2Si conservation within the implanted layer are determined (Φ = 6Φ1016cm-2 and W = 0.5-1.0J/cm2).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
