Synthesis of Memristive Structures Based on Composite Oxides with Agglomerates of Nanoparticles

Abstract

This study is concerned with the creation of a promising element base for smart systems based on memristive technologies. A review of the methods for the synthesis of memristive structures based on chalcogenides, metal oxides, and polymers is carried out. A method for the synthesis of a memristive structure based on metal oxides (in particular, TiO2 and Al2O3) is proposed. The effect of various combinations of contact material, as well as thicknesses, structure, and location of the film layers constituting the resistive layer on the parameters of the synthesized structure, is analyzed. A solution to one of the main problems of memristive systems in terms of obtaining a stable nanometer structure of element films capable of providing a long-term stable channel in a resistive layer of a memristor with a stable current-voltage characteristic is proposed. In order to obtain a similar effect, films with a homogeneous structure having a stoichiometric composition of the sprayed substances and a minimum level of mechanical stresses are required. These requirements can be obtained using the method of magnetron sputtering. Control over the deposition rate makes it possible to obtain more dense or loose film structures. This fact affects the threshold switching resistance in the resistive channel. The proposed method opens up the prospects of creating miniature memory cells of a new generation with an information volume of about 1000 times that of classical memory elements and an unlimited switching resource.