Synthesis of large scale GaN nanowires by ammoniating Ga2O3/Co thin films deposited on Si(111) substrates

Abstract

Large scale single crystal GaN nanowires were synthesised on Si(111) substrates by ammoniating technology using cobalt metal as the buffer layer. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy and Fourier transformed infrared spectrometry were used to characterise the products. The results showed that the products are of hexagonal wurtzite structure. The diameters of the nanowires were in the range of 50–200 nm with lengths up to several tens of micrometres. The growth process of the GaN nanowire is also discussed.