Abstract
Straight and smooth GaN nanowires were synthesized on quartz substrates through the direct reaction of Ga2O3 thin films with flowing ammonia in a horizontal oven without using a template or catalyst. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and photoluminescence (PL) were used to characterize the samples. The straight and smooth cylindrical nanostructures are high quality single crystalline hexagonal wurtzite GaN nanowires with diameters ranging from 5 to 30nm and lengths up to 20μm. The near-band-edge emission peak located at 367nm was observed at room temperature.
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