Abstract
Ultraviolet (UV) photodetectors employing ZnO nanorods (NRs) exhibit high photocurrent stability; however, UV photodetectors fabricated using ZnO NRs have several disadvantages. In this study, we fabricated high-performance UV photodetector using hydrothermally grown MoS2/ZnO heterostructure. The surface morphology of MoS2/ZnO heterostructure exhibited sea-urchin structure with a greater length and diameter than ZnO NRs. In addition, the formation of MoS2/ZnO heterostructure can form a type-II band alignment at interface between MoS2 and ZnO, which facilitates the regulation of electron movement with large surface area. With respect to UV photoresponse, MoS2/ZnO heterostructure exhibited a significantly improved photocurrent value compared to ZnO NRs and MoS2/ZnO heterostructure had extremely fast UV photoresponse speed with highly improved photoresponsivity, photosensitivity, and photoselectivity. Therefore, it was concluded that hydrothermally grown MoS2/ZnO heterostructure is a suitable solution to drawbacks of ZnO-based UV photodetectors; consequently, the proposed method can be used to fabricate ZnO-based high-performance optoelectronics applied in various fields.
Published Version
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