Abstract
In this study, we fabricated high-quality In-doped ZnO (IZO) nanorods (NRs) by regrowing ZnO NRs via vapor-confined face-to-face annealing (VC-FTFA) method with IZO films and verified the effect of oxidation of chloride vapor generated during the annealing process on the photoresponse properties. ZnCl2 and InCl3 vapors were generated at temperatures below 400 °C and subsequently decomposed to Zn2+, In3+, and Cl−, respectively. The ZnO NRs regrown to form high-quality IZO NRs as a result of the Zn and In vapors. The regrowth mechanism for the IZO NRs is a vapor-solid mechanism in which NRs grow into films via the oxidation of the Zn and In vapors and their subsequent condensation. The ZnO NRs regrown using the VC-FTFA method exhibited improved crystallinity in comparison to the hydrothermally grown ZnO NRs and also exhibited an increased near-band-edge emission intensity. An ultraviolet (UV) photodetector based on the regrown IZO NRs exhibited an increased photoresponse rate alongside excellent stability and reproducibility in comparison to a UV photodetector based on hydrothermally grown ZnO NRs. Therefore, the proposed method can form a facile approach for the fabrication of fast-response UV photodetectors exhibiting significant photosensitivity and photocurrent stability.
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