Synthesis of In(Sn)-O and Sn(In)(Sb)-O System Nanoparticles Using DC Arc Plasma Method

Abstract

A new DC arc plasma concept was proposed to produce metal oxide nanoparticles by metal melting, blasting or gasification processes. It was exemplified by the preparation of single phase nanoparticles SnO2, In2O3 and SnO2, In2O3-based composite nanoparticles such as In2O3:Sn (ITO), SnO2:Sb (ATO) and SnO2:In:Sb (IATO). X-ray diffraction (XRD) indicates that the doped SnO2 and In2O3 are single phase and there is no other secondary phase. The results of transmission electron microscopy (TEM) show that for the prepared single phase nanoparticles with good dispersion, the particle size ranges from 20 to 50 nm. The prepared ITO and ATO nanoparticles were utilized in ITO target and ATO electrode, and their density and electrical properties were tested. The prepared ITO target and ATO electrode have high density and low resistivity, and the ITO target has good film-forming effect, which implies that the ITO and ATO nanoparticles prepared by DC arc plasma can be applied to the field of flat panel displays and conductive electrodes.