Abstract
The tungsten oxide (WO3) were fabricated by thermal decomposition method, with help of precursor Ammonium meta-tungstate (AMT). Bismuth vanadate (BiVO4) was formed by sol–gel based dip coating method. WO3/BiVO4 heterojunction, was formed by spin coating BiVO4 on WO3 surface. The number of layers in BiVO4 on WO3 coated substrate was varied. As prepared films were characterized by scanning electron microscopy (SEM), UV–vis absorption, x-ray diffraction (XRD). Photoelectrochemical (PEC) tests such as linear sweep voltammetry (LSV), electrochemical impendence spectroscopy (EIS) and chronoamperometeric tests were performed for WO3, BiVO4, and WO3/BiVO4 heterojunction structure. It was found that WO3/BiVO4 heterojunction produced higher photocurrent density than other photoanodes. It was also observed that the heterojunction showed an enhanced light absorption and charge separation process thus improving the overall performance of the photoelectrochemical (PEC) cell.
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