Synthesis of Gallane‐Amine adducts as potential precursors for GaAs and (AlGa)as MOVPE processes and the crystal structure of the {gallane · 1,3‐bis(dimethylamino)propane} adduct H3Ga · N(CH3)2(CH2)3N(CH3)2

Abstract

Novel gallane‐amine adducts have been synthesized and tested as alternative sources for the epitaxial growth of GaAs and (AlGa)As thin layers by metal organic vapor phase epitaxy. These precursors solve the problem of unwanted incorporation of carbon that arises with standard metalorganic sources. A single‐crystal X‐ray diffraction study provides more detailed insight into the molecular geometries of gallane‐amine adducts.