Abstract
Cadmium zinc sulfide (CdZnS) is a remarkable semiconducting material used as window layer in solar cells. Herein, the flower’s like microstructured CdZnS film is synthesized by powder vapor transport (PVT) technique. The structural parameters like lattice constant, various diffraction planes, crystallinity, preferential orientation factor and standard deviation of CdZnS film of good quality growing preferentially along (110) orientations. The growth of longitudinal optical phonons modes at 303 and 599 cm−1 confirms the synthesis of CdZnS film. The values of transmittance and refractive index are ranged from 89.9%–95.2% and 1.53–2.67 whereas the values of energy band gap, oscillator energy and dispersion energy are found to be 2.79, 0.73 and 1.73 eV respectively. The values of dielectric constant are increased with increasing photon energy. The smaller values of dissipation factor and volume/surface energy loss functions of CdZnS film is suitable to make it a good quality capacitor. The electrical conductivity (1.68×103 S cm −1 ) of CdZnS film is increased nonlinearly with increasing temperature and the activation energy is found to be 0.31 eV. It is determined that the synthesized CdZnS film may be used as window layer in solar cells and to make good quality capacitor, hence it may be used in optoelectronic applications.
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