Abstract
We synthesized epitaxial titanium oxide thin films on MgO (100) using a combination of a metalorganic pulsed molecular beam and an oxygen-radical beam. At temperatures below 350°C, titanium oxide (TiO2) thin films were exclusively deposited only when an oxygen-radical beam was irradiated along with Ti(i-OC3H7)4. Above this temperature, TiO2 thin films were deposited both in the presence and absence of the oxygen-radical beam; however, the oxygen-radical beam enhanced the deposition rate as well as the crystallinity of the titanium oxide thin films.
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