Abstract
Crystalline carbon nitride was easily synthesized from radicals prepared by the reaction between N atoms and a graphite rod anode in the argon‐nitrogen plasma arc at atmospheric pressure. The deposits on Si (111) wafer substrate were identified as by the x‐ray diffraction method, and the C‐N bond was detected in the deposit by infrared (IR) spectroscopy and x‐ray photoelectron spectroscopy (XPS). The existence of sp3 orbital on the C atom in is presumed from the XPS spectra of the valence band of the deposit.
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