Abstract
Buried layers of silicon nitride (Si 3N 4) were synthesised by rapid thermal annealing (RTA) of high-dose (10 18 ions cm −2) nitrogen implanted (at 150 keV) silicon. The influence of RTA temperature and time on the formation of buried layers of silicon nitride was studied by IR transmission and X-ray diffraction techniques. It is found that RTA at 1200 °C for 150 s or 1250 °C for 100 s results in buried polycrystalline silicon nitride layers. The results are compared with those obtained by traditional furnace annealing.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call