Abstract
Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.
Highlights
Hydrogenated intrinsic polysilicon film can reduce the cost of optoelectronics device significantly
We described the growth, optimization, and characterization of boron-doped polycrystalline silicon films synthesized using hot wire chemical vapor deposition (HWCVD)
The HWCVD system used in this work [11] was custom made of stainless steel with provision of a window for monitoring the tungsten filament temperature
Summary
Hydrogenated intrinsic polysilicon film can reduce the cost of optoelectronics device significantly. The prospects of intrinsic polysilicon films for thin-film solar cell and other optoelectronic device fabrication using hot wire chemical vapor deposition (HWCVD) were well evaluated [1]. Boron-doped highly conducting 0.08 (Ωcm)−1 polycrystalline silicon films were optimized using. Thin-film solar cell fabricated on plastic substrate at 150 ◦ C showed the prospect of these films as a cost-effective solution [5]. We described the growth, optimization, and characterization of boron-doped polycrystalline silicon films synthesized using HWCVD. A range of experiments were conducted by varying the growth conditions to optimize the crystalline quality of silicon film with an intention to use the film in a solar cell [9,10]. We conducted experiments for the synthesis of p-type polycrystalline silicon layers on a variety of substrates
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