Synthesis of bilayer MoS2 and corresponding field effect characteristics

Abstract

Two-dimensional transition-metal dichalcogenides such as MoS2 are promising materials for next-generation nano-electronic devices. The physical properties of MoS2 are determined by layer number according to the variation of band-gap. Here, we synthesize large-size bilayer-MoS2 with triangle and hexagonal nanosheets in one step by chemical vapor deposition, Monolayer and bilayer-MoS2 back-gate field effect transistors are also fabricated and the performance including mobility and on/off ratios are compared. The bilayer-MoS2 back-gate field effect transistor shows superior performance with field effect mobility of ∼21.27cm2V-1s-1, and Ion/Ioff ratio of ∼3.9×107.