Abstract

This paper discusses the synthesis and graphitization of three boron-containing phenyl acetylides, with B/C ratios between 1 18 and 1 8 . The experimental results show that the initial rate at which the graphitic structure develops is strongly related to the molecular structure of the phenyl acetylides. The formation of non-coplanar molecular structure in the stabilization reaction slows down the graphitization reaction. However, all three precursors show effective transformation reactions to produce the boron-substitutional graphitic (B/C) materials at relatively low temperature (2200 °C), despite the significant differences in boron concentration and chemical nature of the precursors. Relatively large crystallite size and small d-spacing between interlayers of B/C products were observed by X-ray diffraction. Clearly, boron is not only substitutionally incorporated in the graphitic structure but also enhances the graphitization reaction.

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