Abstract
This paper describes metastable A15 Nb-Si films synthesized by dual-target dc-magnetron sputtering. The approximate 40-Å Si precoating on a surface of sapphire substrates is found to greatly affect the suppression of a competing stable Ti3P-type phase formation. It is confirmed that Tcon (1% onset of superconductivity) > 13 K films can be prepared with good reproducibility using compositional grading. The crystal growth of A15 Nb-Si films on Si-precoated substrates is investigated and a model for A15 film growth is presented.
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