Synthesis of a-SiO x : H thin films by the gas-jet electron beam plasma chemical vapor deposition method

Abstract

Thin a-SiOx: H films have been synthesized for the first time by the gas-jet electron beam plasma chemical vapor deposition method. As the substrate temperature increased from room temperature to 415°C, the thin film growth rate decreased from 2 to 1.15 nm/s, the hydrogen concentration in the thin films decreased from 12.5 to 4.2%, and the oxygen concentration increased from 14.5 to 20.8%. A decrease in the hydrogen content is related to enhanced effusion and thermal desorption. The Raman spectra of Si–Si bonds in the films are typical of materials with amorphous structure.