Abstract
Cupric oxide (CuO) has been deposited onto glass and n-Si (1 0 0) substrate by sol-gel technique. pH of the sol and annealing temperature during film growth were found to be the key parameters for depositing the above film. Microstructural, optical and bonding environmental studies were performed on the above films. The grain sizes in these polycrystalline films varied between ∼50 and 100 nm. Films were preferentially oriented in (−1 1 1) direction. Electrical and galvanomagnetic measurements indicated films to be predominantly p-type with carrier concentration value ∼3.47 × 1015/cm3 and mobility values ∼4.475 cm2/Vs. A typical p-CuO/n-Si hetero-junction structure has been successfully fabricated with open circuit voltage (VOC) ∼359 mV and short-circuits current density (JSC) ∼4.65 mA/cm2, fill factor (FF) ∼0.38 and efficiency (η) ∼1.05%.
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