Synthesis and thermal characterization of pulsed laser deposited molybdenum on aluminium nitride substrates for heat sink applications

Abstract

Thin films of molybdenum (Mo) were grown on aluminium nitride (AlN) substrates by pulsed laser deposition for heat sink applications. The effect of experimental growth parameters on the films’ structural properties were investigated by Scanning Electron Microscopy, X-Ray Diffraction and Atomic Force Microscopy. Thermal characterization was achieved by measuring the in-plane thermal diffusivity of the grown layers by means of a photothermal beam deflection technique using an IR heating laser. Within the experimental parameters studied in this work, a substrate temperature of 600 ˚C and an ambient argon gas pressure of 10 mTorr were identified as the optimal growth conditions for the synthesis of smooth and well-crystallized Mo layers. Concurrently, the thermal diffusivity of the films is significantly affected by film growth parameters. Under the optimal growth conditions, a thermal diffusivity value as high as 5.42x10-5 m2/s was measured, a value that is very close to that of bulk Mo, and which would be a result of the synthesis of polycrystalline Mo films whose grains’ size is greater than the heat carriers mean free path, namely the free electrons. The temperature dependence of the thermal diffusivity was also investigated, and the films were found to be stable up to an operating temperature of 200 °C. Beyond this temperature, photothermal beam deflection imaging shows the onset of film delamination from the underlying substrate.