Abstract
Zinc oxide is a wide band gap semiconductor with a large exciton binding energy (60meV). As a result the nanostructures of this material have many potential applications in electronic and optoelectronic devices. In this work, the growth and optical properties of ZnO nanowires have been studied. The nanowires (NW) of ZnO were synthesized using low pressure chemical vapour deposition method (LPCVD) under different chamber pressures. The growth was carried out on (100) Si wafers pre-coated by gold particles as a catalyst. The morphology of the synthesized NWs and their optical properties like transparency and reflection were studied. The NW arrays have high optical transmittance compared to ZnO thin films prepared by sputtering. The photoluminescence of the NWs were also measured and compared with that of ZnO thin films. The two types of NW structures obtained have potential applications in photovoltaic devices as optical and electrical components.
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