Abstract
Sol–gel based dip coated Mn(II) doped indium tin oxide (ITO) films were prepared on pure silica glass at 350 °C and 450 °C using the aqueous solutions of In(III), Sn(IV) and Mn(II) salts having atomic ratio of In:Sn:Mn as 84.6:9.4:6.0. Thin films were characterized by XRD, EDX, SEM, AFM, TEM and photoluminescence (PL) studies. Oxygen deficiency in ITO films decreased due to Mn(II) doping. Quantum confinement of electron–hole pairs occurred in nanocrystals of Mn(II) doped ITO of average size range from 4.7 nm to 6.4 nm. Excitonic transitions and PL behaviours have been illustrated to focus quantum confinement and exciton–phonon interaction.
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