Abstract
Tb doped AlN (AlN:Tb) nanobelts were prepared by in situ doping of Tb using a plasma-assisted arc discharge method. The structure, composition and morphology of the doped nanobelts were studied by means of X-ray diffraction, scanning and transmission electron microscopy and X-ray photoelectron spectroscopy, revealing that Tb ions have been introduced into the lattice of wurtzite-structured AlN nanobelts. The AlN:Tb nanobelts exhibit distinct emission peaks corresponding to intra-4f electron transitions of Tb3+ ions, and room temperature ferromagnetism, which make AlN:Tb nanobelts an excellent candidate for applications in future solid light-emitting diodes and spintronic nanodevices.
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