Synthesis and morphology of CVD diamond on Ta and TaC film

Abstract

Synthetic diamond films have been deposited on the Si(111) surface, polycrystalline Ta plate, TaC/Si, and TaC/Ta substrates using an electron assisted chemical vapor deposition (EACVD) method. The effects of substrate pretreatment and existence of carbide layer on the diamond nucleation, subsequent growth and morphology have been studied. The substrate pretreatment, scratching by diamond powder, affects nucleation behavior, subsequent growth and morphology of diamond. Existence of carbide layer and formation of carbide on the substrate affects nucleation density, growth rate and morphology of diamond.