Synthesis and growth of 3C-SiC crystals from solution at 950°C

Abstract

In order to reduce the growth temperature of SiC crystals, Ga–Al–Si and/or Sn–Al–Si solution, in which the Si content was just below the saturation value, was reacted with C 3H 8 gas at 950°C. After a 10 h-reaction, many small crystals were found in the solution. X-ray diffraction measurements revealed that the crystals are 3C-SiC. Using the wetting solution of these solutions, 3C-SiC crystal layers could be grown on a 6H-SiC substrate.